The fourth generation of domestic semiconductor leading enterprise - Zhejiang University Gallium kernel Semiconductor completed nearly 100 million yuan of financing

On August 7th, Hangzhou GAREN SEMI Co., Ltd. (hereinafter referred to as "GAREN SEMI" ) ushered in the Pre-A round of financing and strategic cooperation signing ceremony. This round of investment is led by Jiuzhi Capital and jointly invested by Puhua Capital. Lanchi Venture Capital, Yuquan Capital and Yiling Capital, the company's angel round investment institutions, attended the signing ceremony of this financing.

About GARENSEMI

Hangzhou GAREN SEMI Co., Ltd. was established in September, 2022. It is a high-tech enterprise specializing in the research, development, production and sales of wide band gap semiconductor materials such as gallium oxide. Relying on the State Key Laboratory of Silicon and Advanced Semiconductor Materials of Zhejiang University and Hangzhou International Science and Technology Innovation Center of Zhejiang University, the company has formed a research, development, production and operation team with academicians of Chinese Academy of Sciences as the chief consultant and rich industry experience.

GAREN SEMI led the industry innovation, successfully pioneered new technologies of gallium oxide single crystal growth such as casting, and achieved technological breakthroughs in the production of 6-inch single crystal substrates and 2-inch (010) single crystal substrates. The company has mastered the core technologies of gallium oxide growth, processing and epitaxy, and obtained more than ten international and domestic invention patents to help domestic gallium oxide-related industries get rid of international monopoly and blockade. To provide customers with high-quality gallium oxide substrate products with completely independent intellectual property rights.

The company's products include gallium oxide polishing sheets with different sizes, crystal orientations and resistivity, and customized gallium oxide seeds and ingots. The products are mainly used for power electronic devices in the fields of national grid, new energy vehicles, rail transit and 5G communication.

Team Background

The team was established in 2018. Under the design and guidance of academic leader Academician Yang Deren, team members took the lead in starting research and development of gallium oxide single crystal materials in the State Key Laboratory of Silicon and Advanced Semiconductors of Zhejiang University. In 2020, the team carried out a small experiment of gallium oxide single crystal in Hangzhou International Science and Technology Innovation Center of Zhejiang University. In recent years, our team has been growing, and the core members have joined Hangzhou GAREN SEMI Co., Ltd., which has grown into an excellent R&D and production team with academicians of Chinese Academy of Sciences as the chief consultant. R&D personnel have many years of R&D experience in single crystal growth, processing and detection of gallium oxide, and their backgrounds cover physics, chemistry, materials and semiconductor fields, forming a multi-disciplinary cross-integration, and have rich experience in company operation and capitalization.

Technological Innovation

In terms of technical progress, GAREN SEMI, together with the Advanced Semiconductor Research Institute of Hangzhou International Science and Technology Innovation Center of Zhejiang University and the State Key Laboratory of Silicon and Advanced Semiconductor Materials, successfully prepared a high-quality 6-inch unintentionally doped and conductive gallium oxide (β-Ga2O3) single crystal substrate by the casting method independently initiated by Academician Yang Deren.

In April 2024, GAREN SEMI introduced a new product, 2-inch wafer-level (010) gallium oxide semi-insulating single crystal substrate, and realized independent mass production of 2-inch (010) gallium oxide single crystal substrate, breaking the international monopoly.

In July, 2024, GAREN SEMI successfully prepared a 3-inch wafer-level (010) gallium oxide single crystal substrate, which is said to be the largest size reported in the world.